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product structure : silicon monolithic integrated circuit this product has no designed protec tion against radioactive rays . 1/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 tsz22111 14 001 www.rohm.com tbd 65v, 1a, 2mhz synchronous step-down regulator with 20ns minimum on pulse BD51180TL general description BD51180TL is a current mode synchronous dc/dc converter integrating high voltage tolerant power mosfets. the wide range input up to 65v and the very short minimum on pulse down to 20ns enables direct conversion from 48 v battery to 3.3 v at 2.1 mhz operation. features ? aec-q100 qualified ? built-in n-channel power mosfets ? soft start function ? current mode control ? over current protection ? thermal shut down protection ? input under voltage lock out protection ? input over voltage protection ? output over voltage protection ? short circuit protection ? compact and high power surface-mounted package applications ? automotive battery powered supplies ? industrial equipment ? consumer supplies key specifications ? input voltage range: 12 v to 65 v ? minimum on pulse: 20 ns ? output voltage range: 1 to 5 v ? output current: 1a (max) ? selectable operating frequency: 2.1 mhz (typ) ? reference voltage accuracy:2 %(-40 c to +125 c) ? shutdown circuit current: 0 a (typ) ? operating temperature range: -40 c to +125 c package(s) w(typ) x d(typ) x h(max) vqfn24sv4040 4.00mm x 4.00mm x 1.00mm typical application circuit under development the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. vin pvin en pgnd vregh bst sw fb comp rt gnd vo vout c in c vregh r rt r 3 c 1 r 2 c o r 1 c boot l 1 r boot datashee t downloaded from: http:///
datasheet d a t a s h e e t 2/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd pin configuration pin descriptions pin no. pin name function 1 en enable pin. apply low-level (0.8 v or lower) to turn this device into shutdown mode. apply high-level (2.5 v or higher) to enable this device. 2 vin power supply input pin for internal circuits. connect this pin to pvin. 3 to 6 pvin power supply input pin for the switching regulator. connect vin terminal of input capacitor(s). 10 f and 0.1 f ceramic capacitors are recommended. 7 to 10 pgnd power gnd input pin. connect gnd terminal of input capacitor(s). 11, 12, 16, 18, 24 test no connection pins. connect these pins to gnd. 13, 14 sw switching node pin. this pin is connected to internal power mosfets. connect an power inductor to this pin. 15 bst connect a 0.1uf mlcc bootstrap capacitor between this pin and sw pin. this capacitor becomes the power supply of the high-side mosfet gate driver. 17 vregh internal power supply output terminal. a power supply is supplied to a circuit for the control. 19 rt switching frequency setting pin. connect a frequency setting resistor between this pin and gnd. 20 comp output of the gm error amplifier, and th e input of pwm comparator. connect phase compensation components to this pin. see page tbd on how to calculate the resistance and capacitance for phase compensation. 21 gnd ground 22 fb inverting input node for the gm error amplifier. connect output voltage divider to this pin for setting the output voltage. 23 vout output voltage terminal. - e-pad exposed pad. connect this pad to the internal pcb ground plane using multiple vias to obtain excellent heat dissipation characteristics. pgnd pgnd pgnd pgnd test(n.c.) test(n.c.) test(n.c.) vout fb gnd comp rt vin en pvin swsw bst vregh test(n.c.) test(n.c.) e-pad pvin pvin pvin downloaded from: http:///
datasheet d a t a s h e e t 3/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd block diagram vcc en en vref prereg vref vregh vregh vregh vout uvlo ovp_vcc vcc vcc tsd sdwn pwm logic driver vregh bst pvcc sw ocp ocpout pgnd reset pwm set osc sdwn ocpout ovpout vref slope 0.8v soft start rt comp ovpout fb ovp_fb 0.96v gnd err amp vregh downloaded from: http:///
datasheet d a t a s h e e t 4/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd description of blocks ? error amp the error-amp block is an error amplifier and its inputs are t he reference voltage 0.8 v (typ ) and the fb pin voltage. the output comp pin controls the swit ching duty and output voltage vo. insert a capacitor and a resistor between this pin and gnd for the loop phase compensation. ? soft start the soft start block prevents t he overshoot of the output voltage v o by gradually increasing the input of the error amplifier when the power supply turns on to gradually increase the switching duty cycle. the soft start time is set to 1.1 ms (typ). the soft start time can be changed by setting of the oscillating frequency. ? en the ic is in normal operation when the volt age at en terminal is more than 2.5 v. the ic will shut down when the voltage at en terminal becomes less than 0.8 v. ? osc (oscillator) this circuit generates a clock signal which determines conv erter switching frequency. the frequency of the clock can be set by a resistor connected between the rt pin and g nd, and the typical switching frequency is 2.1 mhz. this clock is also used to set the ramp rate of the soft start block. ? slope this block generates saw tooth signal used for ramp compensa tion to prevent sub-harmonic oscillation. inductor current information is added to the saw tooth signal. ? pwm this block modulates duty cycle by comparing the comp pi n voltage and the saw tooth si gnal from the slope block. ? pwm logic the pwm logic block controls the power mosfet on and off timings. the clock signal from osc block determines the side mosfet on timing, and the pwm bloc k output determines the off timing in normal operation. in addition, each protection output signal is passed to the pwm logic and it controls proper protection functions. ? tsd (thermal shut down) this is a thermal shutdown circuit. the switching regu lator operation is disabled to prevent thermal damage or a thermo-runaway of the ic when the chip temperature reaches to approximately 175 o c s (typ), and the operation comes back when the chip temperature comes down. note that the thermal shutdown circuit is intended to prevent catastrophic failure of the ic itself. therefore it is highly recomme nded to keep the ic temperature always within the operating temperature range. operation above operating temperature range will reduce lifetime. ? ocp (over current protection) while the low-side n-channel power mosfet is on, if the voltage between the drain and source exceeds the reference voltage which is internally set within the ic, the ocp will be activated. this protection is a self-return (foldback) type. however, this protection circuit is only effective in preventing destruction from sudden accident. it does not support the continuous operation of the protection circuit (e.g. when a load is co nnected, which significantly exceeds the output current capability). ? ovp_fb (over voltage protection) output over voltage protection circuit. when the output becomes than 120 % (typ) of the target voltage, both of the output mosfets are turned off and the regulator operation is stopped. when the output voltage comes down to 110 % (typ) of the target voltage, it re turns to normal operation. ? uvlo (under voltage lock-out) uvlo is a protection circuit that pr events low voltage malfuncti on, especially during power up. it monitors the v in power supply voltage. if v in is less than the falling threshold voltage, 11 v (max) , the regulator is disabled. when the input voltage becomes higher than the rising threshold, the regulator restarts the operation with soft-start. ? driver this circuit drives the gate of the n-channel power mosfets. ? ovp_vcc input over voltage protection circuit. w hen input voltage becomes higher than 65 v (min), the regulator is disabled. when the input voltage becomes lower than the falling threshold, the regulator restar ts the operation with soft-start. this hysteresis is typically 5 v. downloaded from: http:///
datasheet d a t a s h e e t 5/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd absolute maximum ratings (ta = 25c) parameter symbol rating unit supply voltage v in -0.3 to +80 v en input voltage v en/sync -0.3 to v in v sw input voltage v sw -1.0 to v in v bst input voltage v bst -0.3 to v sw +7 v voltage from sw to bst v bst-sw -0.3 to +7 v fb input voltage v fb -0.3 to +7 v reg input voltage v reg -0.3 to +7 v storage temperature range t stg -55 to +150 ? c maximum junction temperature t jmax 150 ? c caution: operating the ic over the absolute maximum ratings may damage the ic. the damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. therefore, it is import ant to consider circuit protection measures, such as adding a f use, in case the ic is operated over the absolute maximum ratings. thermal resistance (note 1) parameter symbol thermal resistance (typ) unit 1s (note 3) 2s2p ( note 4) vqfn24sv4040 junction to ambient ja 150.6 37.9 c/w junction to top characterization parameter (note 2) jt 20 9 c/w (note 1) based on jesd51-2a (still-air) (note 2) the thermal characterization parameter to report the difference between junction temperature and the temperature at the top cen ter of the outside surface of the component package. (note 3) using a pcb board based on jesd51-3. layer number of measurement board material board size single fr-4 114.3mm x 76.2mm x 1.57mmt top copper pattern thickness footprints and traces 70 m (note 4) using a pcb board based on jesd51-5, 7. layer number of measurement board material board size thermal via (note 5) pitch diameter 4 layers fr-4 114.3mm x 76.2mm x 1.6mmt 1.20mm 0.30mm top 2 internal layers bottom copper pattern thickness copper patte rn thickness copper pattern thickness footprints and traces 70 m 74.2mm 2 (square) 35 m 74.2mm 2 (square) 70 m (note 5) this thermal via connects with the copper pattern of all layers. downloaded from: http:///
datasheet d a t a s h e e t 6/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd recommended operating conditions (ta= -40 c to +125 c) parameter symbol min typ max unit operating power supply voltage v in 12 - 65 v operating temperature range t opr -40 - 125 ? c output voltage v out 0.8 - 5 v sw minimum on time t onmin - 20 - ns output current (note 1) i out 0 - 1 a (note 1) overcurrent protection sw current should not be exceeded. electrical characteristics (unless otherwise specified ta = -40 ? c to +125 ? c, v in = 48 v, v en/sync = 5 v) parameter symbol min typ max unit conditions shutdown circuit current i sdn - 0 5 a v en/sync = 0 v, ta = 25 ? c circuit current i cc - 3.5 tbd ma v fb = 2.0 v reference voltage v fb 0.784 0.800 0.816 v v fb = v comp fb pin input current i fb - 0 1 a v fb = 2.0 v comp pin sink current i cpsink - 50 - a v comp = 1.2 v, v fb = 2 v comp pin source current i cpsource - -50 - a v comp = 1.2 v, v fb = 0 v soft start time t ss - 1.1 - ms f sw = 2.1 mhz power mos over on resistance r onh - 450 900 m ? i o = 50 ma power mos under on resistance r onh - 300 600 m ? i o = 50 ma output leak current i oleakh - 0 5 a v in = 80 v, v en/sync = 0 v ta = 25 ? c, v sw = 0 v operating output switch current of overcurrent protection i sw tbd tbd tbd a oscillating frequency f sw 1.9 2.1 2.3 mhz en threshold voltage h v enh 2.5 - v in v en threshold voltage l v enl 0 - 0.8 v en pin input current i en - 25 50 a v en/sync = 3 v vin under voltage protection detection voltage v uv_on - - 11.0 v vin under voltage protection return voltage v uv_off - - 12.0 v vin over voltage protection detection voltage v ov_on 65 - - v vin over voltage protection return voltage v ov_off 60 - - v downloaded from: http:///
datasheet d a t a s h e e t 7/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd operational notes 1. reverse connection of power supply connecting the power supply in reverse polarity can damage the ic. take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the ics power supply pins. 2. power supply lines design the pcb layout pattern to provide low impedance supply lines. furthermore, connect a capacitor to ground at all power supply pins. consider the effect of temperature and aging on the c apacitance value when using electrolytic capacitors. 3. ground voltage ensure that no pins are at a voltage below that of t he ground pin at any time, even during transient condition. except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. ground wiring pattern when using both small-signal and large-current ground traces , the two ground traces should be routed separately but connected to a single ground at the refer ence point of the application board to av oid fluctuations in the small-signal ground caused by large currents. also ensure that the ground trac es of external components do not cause variations on the ground voltage. the ground lines must be as s hort and thick as possible to reduce line impedance. 5. thermal consideration should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properti es of the chip. in case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceedin g the maximum junction temperature rating. 6. recommended operating conditions these conditions represent a range within which the expect ed characteristics of the ic can be approximately obtained. the electrical characteristics are guaranteed under the conditions of each parameter. 7. inrush current when power is first supplied to the ic, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the ic has more than one power supply. therefore, give special consideration to power c oupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. operation under strong electromagnetic field operating the ic in the presence of a strong electromagnetic field may cause the ic to malfunction. 9. testing on application boards when testing the ic on an application board, connecting a capacitor directly to a low-impedance output pin may subject the ic to stress. always discharge capacitors comple tely after each process or step. the ics power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. to prevent damage from static discharge, ground the ic during assembly and use similar precautions during transport and storage. 10. inter-pin short and mounting errors ensure that the direction and position are correct when mounting the ic on the pc b. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each ot her especially to ground, power supply and output pin. inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 11. unused input pins input pins of an ic are often connec ted to the gate of a mos transistor. the gate has extremely high impedance and extremely low capacitance. if left unconnected, the electric field from the outside can easily charge it. the small charge acquired in this way is enough to produce a significan t effect on the conduction through the transistor and cause unexpected operation of the ic. so unless otherwise specif ied, unused input pins should be connected to the power supply or ground line. downloaded from: http:///
datasheet d a t a s h e e t 8/8 tsz02201-0xxxxxxxxxx0-1-2 ? 2016 rohm co., ltd. all rights reserved. 21.oct.2014 rev.009 BD51180TL www.rohm.com tsz22111 15 001 the contents are subject to change with out notice because these are under development. please check the newest version when you use this datasheet. tbd 12. regarding the input pin of the ic this monolithic ic contains p+ isolat ion and p substrate layers between adj acent elements in order to keep them isolated. p-n junctions are formed at the intersection of the p layers with the n layers of other elements, creating a parasitic diode or transistor. for example (refer to figure below): when gnd > pin a and gnd > pin b, the p-n j unction operates as a parasitic diode. when gnd > pin b, the p-n junction o perates as a parasitic transistor. parasitic diodes inevitably occur in t he structure of the ic. the operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the gnd voltage to an input pin (and thus to the p substrate) should be avoided. figure 1. example of monolithic ic structure 13. ceramic capacitor when using a ceramic capacitor, determine the dielectric constant considering the c hange of capacitance with temperature and the decrease in nominal capacitance due to dc bias and others. 14. area of safe operation (aso) operate the ic such that t he output voltage, output current, and the maximum junction temperature rating are all within the area of safe operation (aso). 15. thermal shutdown circuit(tsd) this ic has a built-in thermal shutdown circuit that prevents heat damage to t he ic. normal operation should always be within the ics maximum junction temperature rating. if however the rating is exceeded for a continued period, the junction temperature (tj) will rise which will activate the ts d circuit that will turn off a ll output pins. when the tj falls below the tsd threshold, the circuits are automatically restored to normal operation. note that the tsd circuit operates in a situation that exceeds the absolut e maximum ratings and therefore, under no circumstances, should the tsd circuit be used in a set desi gn or for any purpose other t han protecting the ic from heat damage. 16. over current protection circuit (ocp) this ic incorporates an integrated over current protection circuit that is acti vated when the load is shorted. this protection circuit is effective in preventing damage due to sudden and unexpected incidents. however, the ic should not be used in applications characterized by continuous operation or transitioning of the protection circuit. 17. disturbance light in a device where a portion of silicon is exposed to light su ch as in a wl-csp, ic characteristics may be affected due to photoelectric effect. for this reason, it is recommended to come up with countermeasures that will prevent the chip from being exposed to light. downloaded from: http:///
notice-paa-e rev.003 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. if you intend to use our products in devices requiring extreme ly high reliability (such as medical equipment (note 1) , aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life , bodily injury or serious damage to property ( specific applications ), please consult with the rohm sales representative in advance. unless otherwise agreed in writin g by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any rohm s products for specific applications. (note1) medical equipment classification of the specific applic ations japan usa eu china class class class b class class ? class 2. rohm designs and manufactures its products subject to stri ct quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adeq uate safety measures including but not limited to fail-safe desig n against the physical injury, damage to any property, whic h a failure or malfunction of our products may cause. the followi ng are examples of safety measures: [a] installation of protection circuits or other protective devic es to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are no t designed under any special or extraordinary environments or conditions, as exemplified below . accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or c onditions (as exemplified below), your independent verification and confirmation of product performance, reliabil ity, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, including water, oils, chemicals, and organi c solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products are e xposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed t o static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing component s, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subject to radiation-proof design. 5. please verify and confirm characteristics of the final or mou nted products in using the products. 6 . in particular, if a transient load (a large amount of load appl ied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mou nting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating u nder steady-state loading condition may negatively affec t product performance and reliability. 7. de -rate power dissipation depending on ambient temperature. wh en used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range desc ribed in the product specification. 9 . rohm shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc .) flux is used, the residue of flux may negatively affect prod uct performance and reliability. 2. in principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method mus t be used on a through hole mount products. i f the flow soldering method is preferred on a surface-mount p roducts, please consult with th e rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
notice-paa-e rev.003 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, p lease allow a sufficient margin considering variations o f the characteristics of the products and external components, inc luding transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and a ssociated data and information contain ed in this document are presented only as guidance for products use. therefore, i n case you use such information, you are solely responsible for it and you must exercise your own independ ent verification and judgment in the use of such information contained in this document. rohm shall not be in any way respon sible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such informat ion. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take p roper caution in your manufacturing process and storage so t hat voltage exceeding the products maximum rating will not be applied to products. please take special care under dry co ndition (e.g. grounding of human body / equipment / solder iro n, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriorate if the products are stored in the places where: [a] the products are exposed to sea winds or corrosive gases, in cluding cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderabil ity of products out of recommended storage time period may be degraded. it is strongly recommended to confirm so lderability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indi cated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humi dity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage tim e period. precaution for product label a two-dimensional barcode printed on rohm products label is f or rohm s internal use only. precaution for disposition when disposing products please dispose them properly usi ng an authorized industry waste company. precaution for foreign exchange and foreign trade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to appl ication example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. rohm shall not have any obligations where the claims, a ctions or demands arising from the combination of the products with other articles such as components, circuits, systems or ex ternal equipment (including software). 3. no license, expressly or implied, is granted hereby under any inte llectual property rights or other rights of rohm or any third parties with respect to the products or the information contai ned in this document. provided, however, that rohm will not assert its intellectual property rights or other rights a gainst you or your customers to the extent necessary to manufacture or sell products containing the products, subject to th e terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in p art, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified , reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any way whatsoever the pr oducts and the related technical information contained in the products or this document for any military purposes, includi ng but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///
datasheet datasheet notice ? we rev.001 ? 2015 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:///

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